Insulated Gate Bipolar Transistor Igbt

Igbts are capable of switching on and off several thousand times a second.

Insulated gate bipolar transistor igbt.

Offering unsurpassed efficiency and reliability igbts from infineon are ideal for your high power inverters and converters. Igbt insulated gate bipolar transistor provides a high switching speed necessary for pwm vfd operation. As the bjts have high current handling capacity and mosfet control is easy igbts are preferred for medium to high power applications. Insulated gate bipolar transistor igbt june 8 2019 february 24 2012 by electrical4u igbt is a relatively new device in power electronics and before the advent of igbt power mosfets and power bjt were common in use in power electronic applications.

It is a minority charge carrier device and has high input impedance. The igbt transistor takes the best parts of these two types of common transistors the high input impedance and high switching speeds of a mosfet with. Select an igbt download a datasheet run a simulation or find where to buy your igbt online today. The insulated gate bipolar transistor igbt which was introduced in early 1980s is becoming a successful device because of its superior characteristics.

We help oem s contract manufacturers engineers and the defense industry all over the world with their requirements of new parts and also those obsolete or hard to find surplus components. It is a three terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. The insulated gate bipolar transistor igbt is a minority carrier device with high input impedance and large bipolar current carrying capability. Igbt is a three terminal power semiconductor switch used to control the electrical energy.

A vfd igbt can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds. Igbt is subdivided in discrete modules stacks bare dies. The insulated gate bipolar transistor also called an igbt for short is something of a cross between a conventional bipolar junction transistor bjt and a field effect transistor mosfet making it ideal as a semiconductor switching device. Igbt is the short form of insulated gate bipolar transistor.

Available in discrete packages or in modules our igbt devices are suitable for a wide variety of power levels. The igbt combines the insulated gate technology of the mosfet with the output performance characteristics of a conventional bipolar transistor. An insulated gate bipolar transistor igbt is a three terminal power semiconductor device primarily used as an electronic switch which as it was developed came to combine high efficiency and fast switching. It consists of four alternating layers p n p n that are controlled by a metal oxide semiconductor mos gate structure without regenerative clarification needed action.